copyright ? 2002 semicoa semiconductors, inc. rev. h 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. semicoa .com 2N2920 silicon npn transisto r data sheet description semicoa semiconductors offers: ? screening and processing per mil-prf-19500 appendix e ? jan level (2N2920j) ? jantx level (2N2920jx) ? jantxv level (2N2920jv) ? jans level (2N2920js) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 method 2072 for jantxv and jans ? radiation testing (total dose) upon request please contact semicoa for special configurations www. semicoa .com or (714) 979-1900 applications ? general purpose ? matched dual transistors ? npn silicon transistor features ? hermetically sealed to-78 metal can ? also available in chip configuration ? chip geometry 0307 ? reference document: mil-prf-19500/355 benefits ? qualification levels: jan, jantx, jantxv and jans ? radiation testing available absolute maximum ratings t c = 25 c unless otherwise specified parameter symbol rating unit collector-emitter voltage v ceo 60 volts collector-base voltage v cbo 70 volts emitter-base voltage v ebo 5 volts collector current, continuous i c 50 ma power dissipation, t a = 25 c derate linearly above 25 c p t 300 one section 600 both sections 1.71one section 3.43 both sections mw mw/ c power dissipation, t c = 25 c derate linearly above 25 c p t 750 one section 1.5 both sections 4.286 one section 7.14 both sections mw w mw/ c operating junction temperature storage temperature t j t stg -65 to +200 c
copyright ? 2002 semicoa semiconductors, inc. rev. h 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2N2920 silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 25 c off characteristics parameter symbol test conditions min typ max units collector-emitter breakdown voltage v (br)ceo i c = 10 ma 60 volts collector-base cutoff current i cbo1 i cbo2 i cbo3 v cb = 70 volts v cb = 45 volts v cb = 45 volts, t a = 150 c 10 2 2.5 a na a collector-emitter cutoff current i ceo v ce = 5 volts 2 na emitter-base cutoff current i ebo1 i ebo2 v eb = 6 volts v eb = 5 volts 10 2 a na on characteristics pulse test: pulse width = 300 s, duty cycle 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 h fe4 h fe2-1 /h fe2-2 i c = 10 a, v ce = 5 volts i c = 100 a, v ce = 5 volts i c = 1 ma, v ce = 5 volts i c = 10 a, v ce = 5 volts t a = -55 c i c = 100 a, v ce = 5 volts 175 235 300 50 0.9 600 800 1,000 1.0 base-emitter voltage differential |v be1 -v be2 | 1 |v be1 -v be2 | 2 |v be1 -v be2 | 3 v ce = 5 volts, i c = 10 a v ce = 5 volts, i c = 100 a v ce = 5 volts, i c = 1 ma 5 3 5 mvolts base-emitter voltage differential at temperature |v be1 -v be2 | 1 |v be1 -v be2 | 2 v ce = 5 volts, i c = 100 a t a = 25 c and -55 c t a = 25 c and +125 c 0.8 1 mvolts base-emitter saturation voltage v besat1 i c = 1 ma, i b = 100 a 0.5 1.0 volts collector-emitter saturation voltage v cesat1 i c = 1 ma, i b = 100 a 0.3 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe1 | v ce = 5 volts, i c = 500 a, f = 20 mhz 3 20 small signal short circuit forward current transfer ratio h fe v ce = 10 volts, i c = 1 ma, f = 1 khz 150 600 open circuit output capacitance c obo v cb = 5 volts, i e = 0 ma, 100 khz < f < 1 mhz 5 pf noise figure nf 1 nf 2 nf 3 v ce = 5 volts, i c = 10 a, r g = 10 k ? f = 100 hz f = 1 khz f = 10 khz 5 3 3 db short circuit input impedance h ie v cb =5v, i c =1ma, f =1khz 3 30 k ? open circuit output admittance h oe v cb =5v, i c =1ma, f =1khz 60 mhos open circuit reverse voltage transfer ratio h re v cb =5v, i c =100 a, f=1khz 1x10 -3
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